Si4310BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
Ch-1
Ch-2
1.0
1.0
3.0
3.0
V
On-State Drain Current
Gate-Body Leakage
Zero Gate Voltage Drain Current
b
Drain-Source On-State Resistance b
I GSS
I DSS
I D(on)
R DS(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 10 A
V GS = 10 V, I D = 14 A
V GS = 4.5 V, I D = 8.2 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
20
30
100
100
1
100
15
4000
0.009
0.011
0.0065 0.0085
0.013 0.016
nA
μA
A
Ω
V GS = 4.5 V, I D = 13 A
Ch-2
0.0075 0.0095
Forward Transconductance b
g fs
V DS = 15 V, I D = 10 A
V DS = 15 V, I D = 14 A
Ch-1
Ch-2
30
60
S
Diode Forward Voltage b
V SD
I S = 1.8 V, V GS = 0 V
I S = 2.73 V, V GS = 0 V
Ch-1
Ch-2
0.76
0.485
1.1
0.53
V
Dynamic a
Input Capacitance
C iss
Ch-1
Ch-2
790
1530
1580
3060
2370
4590
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
C oss
C rss
Q g
Q gs
V DS = 15 V, V GS = 0 V, f = 1 MHz
Channel-1
V DS = 15 V, V GS = 4.5 V, I D = 10 A
Channel-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
145
300
70
115
290
600
140
225
12
19
5.3
10
435
900
210
340
18
30
pF
nC
Gate-Drain Charge
Q gd
V DS = 15 V, V GS = 4.5 V, I D = 14 A
Ch-1
Ch-2
4.3
5
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
f = 1 MHz
Channel-1
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
Channel-2
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 1.8 A, dI/dt = 100 A/μs
I F = 2.73 V, dI/dt = 100 A/μs
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.90
0.3
1.8
0.95
13
17
10
12
33
53
10
17
25
31
2.7
1.4
20
26
15
20
50
80
15
26
40
50
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 73064
S09-2436-Rev. B, 16-Nov-09
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